Hole transport characteristics in pure and doped GaSb (2002)
Source: Brazilian Journal of Physics. Conference titles: Brazilian Workshop on Semiconductors Physics. Unidade: IFSC
Subjects: SEMICONDUTORES (FÍSICO-QUÍMICA), FÍSICA DA MATÉRIA CONDENSADA
ABNT
MESSIAS, L G O e MAREGA JÚNIOR, Euclydes. Hole transport characteristics in pure and doped GaSb. Brazilian Journal of Physics. São Paulo: SBF. Disponível em: http://sbf.if.usp.br/bjp/Vol32/Num2a/v32_402.pdf. Acesso em: 01 maio 2024. , 2002APA
Messias, L. G. O., & Marega Júnior, E. (2002). Hole transport characteristics in pure and doped GaSb. Brazilian Journal of Physics. São Paulo: SBF. Recuperado de http://sbf.if.usp.br/bjp/Vol32/Num2a/v32_402.pdfNLM
Messias LGO, Marega Júnior E. Hole transport characteristics in pure and doped GaSb [Internet]. Brazilian Journal of Physics. 2002 ; 32( Ju 2002): 402-404.[citado 2024 maio 01 ] Available from: http://sbf.if.usp.br/bjp/Vol32/Num2a/v32_402.pdfVancouver
Messias LGO, Marega Júnior E. Hole transport characteristics in pure and doped GaSb [Internet]. Brazilian Journal of Physics. 2002 ; 32( Ju 2002): 402-404.[citado 2024 maio 01 ] Available from: http://sbf.if.usp.br/bjp/Vol32/Num2a/v32_402.pdf